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HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz
Features
saturated output power: +31 dBm @ 15% pAe output ip3: +38 dBm high Gain: 22 dB DC supply: +6V @ 900 mA no external matching required Die size: 2.77 x 2.32 x 0.1 mm
Typical Applications
The HMC969 is ideal for: * point-to-point radios
3
Amplifiers - lineAr & power - Chip
* point-to-multi-point radios * VsAT & sATCom * military & space
Functional Diagram
General Description
The HMC969 is a 4 stage GaAs phemT mmiC 1 watt power Amplifier which operates between 40 and 43.5 Ghz. The HMC969 provides 22 dB of gain, +31 dBm of saturated output power, and 15% pAe from a +6V supply. with a very good ip3 of 38 dBm, the HMC969 is ideal for linear applications including military and space as well as point-to-point and point-to-multi-point radios. All data is taken with the chip in a 50 ohm test fixture connected via (2) 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length.
Electrical Specifications
parameter frequency range Gain Gain Variation over Temperature input return loss output return loss output power for 1 dB Compression (p1dB) saturated output power (psat) output Third order intercept (ip3)[2] Total supply Current (idd)
TA = +25 C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 900 mA [1]
min. Typ. 40 - 43.5 19 22 0.03 14 27 28 31 38 900 max. Units Ghz dB dB/ C dB dB dBm dBm dBm mA
[1] Adjust Vgg between -2 to 0V to achieve idd = 900 mA typical. [2] measurement taken at +6V @ 900 mA, pout / Tone = +18 dBm
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz
Broadband Gain & Return Loss vs. Frequency
30 20 RESPONSE (dB) 10 0 -10 -20 -30 -40 38 39 40 41 42 43 FREQUENCY (GHz) 44 45 46 14
S21 S11 S22
Gain vs. Temperature
30
26
GAIN (dB)
22
3
+25C +85C -55C
18
10 39 40 41 42 43 44 45 FREQUENCY (GHz)
Input Return Loss vs. Temperature
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 39 40 41 42 43 44 45 FREQUENCY (GHz)
+25C +85C -55C
Output Return Loss vs. Temperature
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 -40 39 40 41 42 43 44 45 FREQUENCY (GHz)
+25C +85C -55C
P1dB vs. Temperature
36 34 32 30 28 26 24 40 41 42 FREQUENCY (GHz) 43 44
P1dB vs. Supply Voltage
36 34 32 30 28 26 24 40 41 42 FREQUENCY (GHz) 43 44
5.0V 5.5V 6.0V
+25C +85C -55C
P1dB (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
P1dB (dBm)
3-2
Amplifiers - lineAr & power - Chip
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz
Psat vs. Temperature
36 34
+25C +85C -55C
Psat vs. Supply Voltage
36 34 32 30 28 26 24
5.0V 5.5V 6.0V
Psat (dBm)
30 28 26 24 40 41 42 FREQUENCY (GHz) 43 44
Amplifiers - lineAr & power - Chip
Psat (dBm)
3
32
40
41
42 FREQUENCY (GHz)
43
44
P1dB vs. Supply Current (Idd)
36 34 32 30 28 26 24 40 41 42 FREQUENCY (GHz) 43 44
Psat vs. Supply Current (Idd)
36 34 32 30 28 26 24 40 41 42 FREQUENCY (GHz) 43 44
800mA 900mA 1000mA
800mA 900mA 1000mA
P1dB (dBm)
Output IP3 vs. Temperature, Pout/Tone = +18 dBm
45
Output IP3 vs. Supply Current, Pout/Tone = +18 dBm
45
40 IP3 (dBm) IP3 (dBm)
+25C +85C -55C
Psat (dBm)
40
35
35
30
30
800mA 900mA 1000mA
25 40 41 42 FREQUENCY (GHz) 43 44
25 40 41 42 FREQUENCY (GHz) 43 44
3-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz
Output IP3 vs. Supply Voltage, Pout/Tone = +18 dBm
45
Output IM3 @ Vdd = +5V
60 50
40 40 IP3 (dBm) 35 IM3 (dBc) 30 20 10 0 40 41 42 FREQUENCY (GHz) 43 44 10 12 14 16 18 20 22 24 Pout/TONE (dBm)
40 GHz 41 GHz 42 GHz 43 GHz 44 GHz
3
Amplifiers - lineAr & power - Chip
3-4
30
5.0V 5.5V 6.0V
25
Output IM3 @ Vdd = +5.5V
60 50 40 IM3 (dBc) 30 20 10 0 10 12 14 16 18 20 22 24 Pout/TONE (dBm)
40 GHz 41 GHz 42 GHz 43 GHz 44 GHz
Output IM3 @ Vdd = +6V
60 50 40 IM3 (dBc) 30 20 10 0 10 12 14 16 18 20 22 24 Pout/TONE (dBm)
40 GHz 41 GHz 42 GHz 43 GHz 44 GHz
Power Compression @ 41 GHz
40 Pout (dBm), GAIN (dB), PAE (%)
Pout Gain PAE
Power Compression @ 42 GHz
40 Pout (dBm), GAIN (dB), PAE (%) 35 30 25 20 15 10 5 0
Pout Gain PAE
35 30 25 20 15 10 5 0 0 3
6
9
12
15
0
3
6
9
12
15
INPUT POWER (dBm)
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz
Reverse isolation vs. Temperature
0 Gain (dB), P1dB (dBm), Psat (dBm) -10 ISOLATION (dB)
Gain & Power vs. Supply Current @ 41 GHz
40 Gain P1dB Psat
3
Amplifiers - lineAr & power - Chip
-20 -30 -40 -50 -60 36 37 38
+25C +85C -55C
35
30
25
20
15
39
40
41
800
900
1000
FREQUENCY (GHz)
Idd (mA)
Gain & Power vs. Supply Voltage @ 41 GHz
40 Gain (dB), P1dB (dBm), Psat (dBm)
Gain P1dB Psat
Power Dissipation
10 9 POWER DISSIPATION (W) 8 7 6 5 4 3 2 1
40GHz 41GHz 42GHz 43GHz
35
30
25
20
15 5 5.5 Vdd (V) 6
0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) rf input power (rfin) Channel Temperature Continuous pdiss (T= 85 C) (derate 15.5 mw/C above 85 C) Thermal resistance (channel to die bottom) storage Temperature operating Temperature +7V +20 dBm 150 C 6.45 w 10.1 C/w -65 to +150 C -55 to +85 C
Typical Supply Current vs. Vdd
Vdd (V) +5.0 +5.5 +6.0 idd (mA) 900 900 900
Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 900 mA
eleCTrosTATiC sensiTiVe DeViCe oBserVe hAnDlinG preCAUTions
3-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz
Outline Drawing
3
Amplifiers - lineAr & power - Chip
3-6
Die Packaging Information
standard Gp-1 (Gel pack)
[1]
Alternate [2]
[1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
noTes: 1. All Dimensions Are in inChes [mm] 2. Die ThiCKness is .004" 3. TYpiCAl BonD pAD is 0.0026" [0.066] sQUAre 4. BACKsiDe meTAlliZATion: GolD 5. BonD pAD meTAlliZATion: GolD 6. BACKsiDe meTAl is GroUnD. 7. ConneCTion noT reQUireD for UnlABeleD BonD pADs. 8. oVerAll Die siZe .002
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz
Pad Descriptions
pad number 1 function rfin Description This pad is AC coupled and matched to 50 ohms. interface schematic
3
Amplifiers - lineAr & power - Chip
2, 6
Vgg
Gate control for amplifier. external bypass capacitors of 100 pf, 0.01 f, and 4.7 f are required on the pad that is used.
3, 5
Vdd1, Vdd2
Drain bias voltage for amplifier. external bypass capacitors of 100 pf, 0.01 f and 4.7 f are required on each pad.
4 Die Bottom
rfoUT GnD
This pad is AC coupled and matched to 50 ohms. Die bottom must be connected to rf/DC ground.
Application Circuit 1
3-7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz
Application Circuit 2
3
Amplifiers - lineAr & power - Chip
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
3-8
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz
Assembly Diagram
3
Amplifiers - lineAr & power - Chip
3-9
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC969
v00.1210
GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, 40 - 43.5 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmC general handling, mounting, Bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
3
Amplifiers - lineAr & power - Chip
3 - 10
RF Ground Plane
0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either waffle or Gel based esD protective containers, and then sealed in an esD protective bag for shipment. once the sealed esD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: handle the chips in a clean environment. Do noT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: follow esD precautions to protect against > 250V esD strikes. Transients: suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup.
0.102mm (0.004") Thick GaAs MMIC
0.076mm (0.003") Wire Bond
RF Ground Plane
0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2.
General Handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with Ausn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. Do noT expose the chip to a temperature greater than 320 C for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or apps@hittite.com

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